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Einrichtungen >> Technische Fakultät (TF) >> Department Elektrotechnik-Elektronik-Informationstechnik (EEI) >>

Lehrstuhl für Elektronische Bauelemente

	2017 Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers
	2016 Amyloidogenic amyloid-β-peptide variants induce microbial agglutination and exert antimicrobial activity Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method Empirical cluster modeling revisited Gettering and Defect Engineering in Semiconductor Technology XVI Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme Metastable defects in proton implanted and annealed silicon Modeling the Post-Implantation Annealing of Platinum Monolithic 3D TSV-based high-voltage, high-temperature capacitors Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation The efficiency of hydrogen-doping as a function of implantation temperature TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H2-Evolution Activity Waveguide Bragg gratings in Ormocer hybrid polymers
	2015 "Black" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution A DLTS study of hydrogen doped czochralski-grown silicon Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs Comparison of silicon and 4H silicon carbide patterning using focused ion beams Comprehensive Study of the Electron Scattering Mechanisms in 4{H}-{SiC} {MOSFETs} Current conduction mechanism of MIS devices using multidimensional minimization system program Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation Impact of Acceptor Concentration on Electrical Properties and Density of Interface States of 4H-SiC n-Metal-Oxide-Semiconductor Field Effect Transistors Studied by Hall Effect Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETS studied by hall effect Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time Role of Defects in the Dopant Diffusion in Si Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications Thermo-Mechanical Ball Bonding Simulation with Elasto-Plastic Parameters Obtained from Nanoindentation and Atomic Force Measurements Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration Weiterfuehrende Angebote(opens in a new window)\|EZB Elektron. Zeitschriftenbibl.(opens in a new window)\|First author search in Pubmed(opens in a new window)\| Export \| Download \| Add to List \| More... Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Volume 365, 15 December 2015, Pages 240-243 A DLTS study of hydrogen doped czochralski-grown silicon
	2014 Analytical stress characterization after different chip separation methods Bioactivation of plane and patterned PDMS thin films by wettability engineering Challenges and Opportunities for Process Modeling in the Nanotechnology Era Characterization and application of 600 v normally-off GaN transistors in hard switching DC/DC converters Comparison of Si/SiC semiconductor performance using experiment-based simulation Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon Deep-level defects in high-dose proton implanted and high-temperature annealed silicon DLTS characterization of proton-implanted silicon under varying annealing conditions Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures Investigation of trenched and high temperature annealed 4H-SiC Modeling Platinum Diffusion in Silicon Modeling the Annealing of Dislocation Loops in Implanted c-Si Solar Cells, Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes New method to increase the doping efficiency of proton implantation in a high-dose regime Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes On an Improved Boron Segregation Calibration from a Particularly Sensitive Power MOS Process Optical polymers with tunable refractive index for nanoimprint technologies Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors Relaxation of Vacancy Depth Profiles in Silicon Wafers: A Low Apparent Diffusivity of Vacancy Species Simulation of the Boron Build-up Formation during Melting Laser Thermal Annealing Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC Thermo-Mechanical Simulation of Plastic Deformation during Temperature Cycling of Bond Wires for Power Electronics Modules Thickness mapping of High-k dielectrics at the nanoscale
	2013 A Comprehensive Model for the Diffusion of Boron in Silicon in Presence of Fluorine Accuracy of wafer level alignment with substrate conformal imprint lithography Activation and dissociation of proton-induced donor profiles in silicon Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation Anomalous Impurity Segregation and Local Bonding Fluctuation in I-Si Application of Artificial Neural Networks to compact mask models in optical lithography simulation Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures Charcterization of n-Channel 4H-SiC MOSFETs : Electrical Measurements and Simulation Analysis Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SIC Detailed leakage current analysis of metal-insulator-metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO 2/Al2O3/ZrO2 as dielectric and TiN electrodes Dopant Dynamics and Defects Evolution in Implanted Silicon under Laser Irradiations: A coupled Continuum and Kinetic Monte Carlo Approach Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication Extended Model for Platinum Diffusion in Silicon Functional epoxy polymer for direct nano-imprinting of micro-optical elements Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation Impact of a High Temperature Anneal on 4H-SiC Trench Profiles Influence of Ion Implantation in SiC on the Channel Mobility in Lateral n-Channel MOSFETs Influence of La on the Electrical Properties of HfSiON: From Diffusion to Vth Shifts Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts Laser melting of nanoparticulate transparent conductive oxide thin films Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses, On the Calculation of Hall Factors for the Characterization of Electronic Devices On the Strain Induced by Arsenic into Silicon On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs On the Thermo-Mechanical Modelling of a Ball Bonding Processs with Ultrasonic Softening Optimization of copper top-side metallization for high performance SiC-devices Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs
	2012 4H-SiC MOSFETs with a stable protective coating for harsh environment applications A generic approach for comparing input filter efforts of voltage- and current source converters Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications Angular distributions of sputtered silicon at grazing gallium ion beam incidence Beiträge zur Herstellung von MOSFETs in Germaniumschichten Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy Comparative investigation on installation space requirements for input filters of DC-link- and matrix converters based on amplitude pseudo-spectra Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget Enthalpy based modeling of pulsed excimer laser annealing for process simulation Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications Ferroelectricity in simple binary ZrO2 and HfO2 Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers In situ monitoring technologies for ammonthermal reactors Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography Modeling boron profiles in silicon after pulsed excimer laser annealing Modular inverter power electronic for intelligent e-drives Nano-analytical and electrical characterization of 4H-SiC MOSFETs Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2 Novel cost-efficient contactless distributed monitoring concept for smart battery cells Novel organic polymer for UV-enhanced substrate conformal imprint lithography Ohmic and rectifying contacts on bulk AlN for radiation detector applications Precipitation of Antimony Implanted into Silicon Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation Reverse recovery of All-SiC switches Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures Smart battery cell monitoring with contactless data transmission Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium Structural and Reliability Analysis of Ohmic Contacts to SiC with a Stable Protective Coating for Harsh Environment Applications The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation
	2011 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions Accuracy and performance of 3D mask models in optical projection lithography Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor Characterization of thickness variations of thin dielectric layers at the nanoscale using Scanning Capacitance Microscopy Charakterisierung und Applikation weichmagnetisch gefüllter Kunststoffe für induktive Komponenten leistungselektronischer Baugruppen Comparative Study on Metallization an Passivation Materials for High Temperature Sensor Applications Conduction Mechanisms and Environmentel Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Tranistors Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters Defects Formed by Pulsed Laser Annealing: Electrical Properties and Depth Profiles in n-Type Silicon Measured by Deep Level Transient Spectroscopy Determination of the Dill parameters of thick positive resist for use in modeling applications Die Finite Integrationstechnik (FIT) und die Anwendung in der Lithographie-Simulation Dielectric layers suitable for high voltage integrated trench capacitors Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters Effects of Oxygen and Forming Gas Annealing on ZnO TFTs Enhancement of Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium Feasibility study of chemically amplified resists for short wavelength extreme ultraviolet lithography Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications Ferroelectricity in yttrium-doped hafnium oxide Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS Germanium substrate loss during thermal processing High pressure oxidation of 4H-SiC in nitric acid vapor Hochvolt MOS-Transistoren (50V) mit integrierter Temperaturüberwachung zur Realisierung mit einem 0,18µm CMOS-Prozess Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC Innovations in structured thin film design and fabrication for optical applications Integration of trench gate technology into planar LDMOS topology Investigation of the reliability of 4H–SiC MOS devices for high temperature applications Lanthanoid Implantation for Effective Work Function Control in NMOS High-kappa/Metal Gate Stacks Leakage current and defect characterization of p+n-source/drain diodes Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy Manufactoring, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy Modeling of pulsed laser annealing for process simulation Modulares Steuerungskonzept für integrierte Messtechnik in der Halbleiterfertigung am Beispiel einer Mehrkammerprozessanlage Monolithic RC-snubber for power electronic applications Monolithisches RC-Element für leistungselektronische Anwendungen Ohmic and rectifying contacts on bulk AlN for radiation detector applications (Poster) On the Influence of RTA and MSA Peak Temperature Variations on Schottky Contact Resistances of 6-T SRAM Cells Profile Rod Technique: Continuous Manufacture of Submicrometer-Thick Ceramic Green Tapes and Coatings Demonstrated for Nanoparticulate Zinc Oxide Powders Properties of SiO2 and Si3N4 as Gate Dielectrics for Printed ZnO Transistors Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation roelectricity in yttrium-doped hafnium oxide Simulation of Plasma Immersion Ion Implantation Thermal characterization of an axle-twin-drive with system integrated double-inverter Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment Verbinden von Leistungshalbleiterbauelementen durch Sintern von nanoskaligen Silberpartikeln ZnO Dünnfilmtransistoren für druckbare Elektronik
	2010 A Highly Integradted EMI Filter Using Polymer Bonded Soft Magnetics as Core Material. A Highly Integrated EMI Filter Using Polymer Bonded Soft Magnetics As Core Material Abscheidung und Charakterisierung metallischer Gateelektroden für zukünftige CMOS-Technologien Acid diffusion effects between resists in freezing Processes used for contact hole imaging Carbon junction implant: Effect on leakage currents and defect distribution Characterization of Arsenic Segregation at Si/SiO2 Interface by 3D Atom Probe Tomography Characterization of the Scattering Effect of Complex Mask Geometries with Surface Roughness Characterization of the Scattering Effect of Complex Mask Geometries with Surface Roughness Chemische Gasphasenabscheidung von Metallsilicatschichten aus Einquellen-Ausgangsstoffen für Anwendungen in der Mikroelektronik Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques Computational algorithms for optimizing mask layouts in Proximity Printing Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines Coupling of Monte Carlo Sputter Simulation and Feature-Scale Profile Simulation and Application to the Simulation of Back Etching of an Intermetal Dielectric Deep doping profiles in silicon created by MeV proton implantation: Influence of implantation parameters Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by DLTS Determination of the Dill parameters of thick positive resist for use in modeling applications Dielectic Layers suitable for high voltage integrated trench capacitors Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC Dopant profiles in silicon created by MeV proton implantation: Influence of annealing parameters Effective Work function tuning in high-k dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis Efficient Simulation of three-dimensional EUV Masks for rigorous Source Mask Optimization and Mask Induced Imaging Artifact Analysis Effizienzoptimierung integrierter elektrischer Antriebssysteme für Hybrid- und Elektrofahrzeuge Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers Evaluation of materials for printed electronics Evaluation of NbN thin films grown by MOCVD and plasma-ehhanced ALD for gate electrode application in high-k/SiO2 gate stacks Evolution of Shear Strength and Microstructure of Die Bonding Technologies for High Temperature Evolution of Solder Joint Strength and Microstructure of High Temperature Lead Free Solders for SiC applications During Thermal Aging Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium Extraordinary low transmission of a metamaterial for application in lithography Fabrication of metakkic SPM Tipps by combining UV nanoimprint lithography and focused ion beam processing Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models Full Wafer Micolens, Repplication by UV Imprint Lithography Future challenges in CMOS process modelling Germanium substrate loss during thermal processing Heat: Basics, Examples, Heat-Exchange Highly sensitive wavefront sensor for visual inspection of bare and patterned silicon wafers Honeycomb Voids due to Ion Implantation in Germanium Impact of forming gas annealing on ZnO-TFTs Impact of Technological Options for 22 nm SOI CMOS Transistors on IC Performance Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations Innovations in structured thin film design and fabrication for optical applications Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil Ladeinfrastruktur für Elektrofahrzeuge Lithography induced layout variations in 6-T SRAM cells Mask and Wafer Topography Effects in Optical and EUV-Lithography Mask and Wafer Topography Effects in Optical and EUV-Lithography Mask diffraction analysis and optimization for EUV masks Mask Models for the Imaging of Contact Holes in Optical Projection Lithography Mask-topography-induced phase effects and wave aberrations in optical and EUV lithography Mask-topography-induced phase effects and wave aberrations in optical and EUV lithography Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography Modeling of double patterninginteractions in litho-curing-litho-etch (LCLE) processes Modeling of double patterninginteractions in litho-curing-litho-etch (LCLE) processes Modeling of exploration of reversible contrast enhancement layers for double exposure lithography Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography Modeling of the effectiv work funktion instability in metal/high-k dielectric stacks Modelling of exploration of reversible contrast enhancement layers for double exposure lithography NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications Optical inspection of flat reflective surfaces by a wave front sensor Optimization of illumination and mask layout for mask aligner lithography Optimization of illumination pupils and mask strucures for proximity printing Polymer bonded soft magnetics for EMI filter applications. Power Electronics System Integration for Electric and Hybrid Vehicles Properties of SiO2 and Si3N4 as Gate Dielectrica for Printed ZnO Transistors Reduced on restistance in LDMOS devices by integrating trench gates into planar technology Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers Rigorous EMF simulation of absorber shape variations and their impact on the lithographic process Rigorous EMF simulation of absorber shape variations and their impact on the lithographic process Semiconductor Joining through Sintering of Ag-Nanoparticles: Analysis of Different Powders Using DSC and TGA Measurements Semiconductor Joining through Sintering of Ag-Nanoparticles: Analysis of Different Powders Using DSC and TGA Measurements Simulation of 3D inclined/rotated UV lithography and its applications to microneedles Simulation of Focused Ion Beam Etching by Coupling a Topography Simulation and a Monte-Carlo Sputtering Yield Simulation Soft Magnetic Polymers - an Attractive Material for EMI Filter Applications The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in FZ Si Topography aware BARC optimazing for double patterning Topography aware BARC optimazing for double patterning Trench gate integration into planar technology for reduced on-resistance in LDMOS devices Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment Tuning of Charge Carrier Density of ZnO Nanoparticle Films by Oxygen Plasma Treatment
	2009 (Poster) Influence of FIB patterning strategie on the shape of 3D structures: Comparison of experiments with simulations A model of self-limiting residual acid diffusion for pattern doubling Acid diffusion effects between resists in freezing processes used for contact hole patterning Advanced lithography models for strict process control in the 32nm technology node Analysis of the DC-arc behavior of a novel 3D-active fuse Application of Thermal Conductive Polymers for the Housing of Mechatronic Systems Case Study III: Polymer Heatsinks Characterization of Organic Contamination during Semiconductor Manufacturing Processing Comparative study between conventional macroscopic IV techniues and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale Comparison between 65nm Balk and PD-SOI MOSFET's:Si/BOX Interface Effect on Point Defects and Doping Profiles Current transport in nanoparticulate layer systems Die Bedeutung der Leistungselektronik für elektriche Straßenfahrzeuge Dünnschichtfeldeffekttransistor auf Basis von ZnO-Nanopartikeln Effective Work Function Engineering by Lanthanide Ion Implantation of MOS Gate Stacks Efficient Analysis of Three Dimensional EUV Mask Induced Imageing Artifacts Using the Waveguide Decomposition Method Efficient analysis of three-dimensional EUV mask-induced imaging atrifacts using the waveguide decomposition method Efficient simulation and optimization of wafer topographies in double patterning Efficient simulation and optimization of wafer topographies in double patterning Electrical conduction in silicon nanoparticle networks under exposure to different atmospheres and vacuum Exploration of linear and non-linear double exposure techniques by simulation Exploration of linear and non-linear double exposure techniques by simulation Extended Abbe approach for fast and accurate lithpgraphy imaging simulations Extended Abbe aproachfor fast and accurate lithography imaging simulations Extraordinary low transmission effects for ultra-thin patterned metal films Finite integration (FI) method for modeling optical wavers in lithography masks Finite integration (FI) method for modeling optical wavers in lithography masks Future Challenges in CMOS Process Modeling Highly sensitive wave front sensor for characterization of micro- to nanometer scale surface flatness deviations Hochgefüllte Kunststoffe für die Leistungselektronik Honeycomb Voids due to Ion Implantation in Germanium Hybrid- und Elektroantriebe für Automobile - neue Anforderungen an die Leistungselektronik Impact of Physical and Chemical Treatment on Si Nanoparticulate Systems Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition Influence of Dispersion and Ambient Conditions on Nanoparticulate ZnO-TFTs Innovative Materials-Key Enabler for High-Performance Power Electronics Lanthanum implantation for threshold voltage control in metal/high-k devices Lithographic importance of base diffusion in chemically amplied photorestists Lithography Simulation: modeling techniques and selected applications Lithography Simulation: modelling techniques and selected applications Mask diffration analysis and optimization for EUV masks Mask diffration analysis and optimization for EUV masks Material properties of injection molded polymer bonded soft magnetics: a process dependent anisotropic characteristic MD3: Material Development for Double patterning and Double exposure Mechanische Integration von Leistungselektronik in die Antriebseinheit eines Axle-Split-Hybrids Modeling and simulation of post exposure bake processes in double patterning Modeling of Mask and Wafer Side Scattering Effects in Advanced Optical and EUV-Lithography Montageerleichterung durch den Einsatz wärmeleitfähiger Kunststoffe Optical lithography beyond the Abbe resolution limit: Double exposure and double patterning Optimization of illumination pupils and mask features for proximity printing Optimizing illumination pupil and mask layout in mask aligner lithography PD-SOI MOSFETs: Interface Effect on Point Defects and Doping Profiles Perspectives of Inverter Integration in Vehicle Powertrains Perspectives of Inverter Integration in Vehicle Powertrains Polymer bonded soft magnetics for EMI-filter applications Polymer bonded soft magnetics for EMI-filter applications Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers Rigorous diffraction simulations of topographic wafer stacks in double patterning Silicon Based Trench Hole Power Capacitor Simulation lithographischer Prozesse zur Erzeugung von Nanostrukturen Soft-Magnetic Polymers Substrate Surface Preparation and Aluminum-Induced Layer Exchange for Improvement of TFT properties Suppression of parasitic electron injection in silicon-oxide-nitride-oxide-silicon-type memory cells using high-k capping layers Virtual Equipment Engineering: A Novel Approach for the Integrated Development of Semiconductor Manufacturing Equipment Wafer topography and multiple exposure effects in dual restist double patterning processes
	2008 23 Jahre Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB) und Lehrstuhl für Elektronische Bauelemente (LEB) A comprehensive resist model fort he prediction of line-edge roughness material and process dependencies in optical lithography A comprehensive resist model fort he prediction of line-edge roughness material and process dependencies in optical lithography A model of self-limiting residual acid diffusion for pattern doubling A model of self-limiting residual acid diffusion for pattern doubling Advanced Activation Trends for Boron and Arsenic by Combinations of Single, Multiple Flash Anneals and Spike Rapid Thermal Annealing Advanced Annealing Strategies for the 32 nm Node Advanced Annealing Strategies for the 32 nm Node Advanced lithography models for strict process control in the 32nm technology node Advanced lithography models for strict process control in the 32nm technology node Aktive Elemente: Schalter- Eigenschaften, Ansteuerung und Schutz Aktive Elemente: Schalter-Eigenschaften, Ansteuerung und Schutz Alternative Source/Drain Contact-Pad Architectures for Contact Resistance Improvement in Decananao Scales DMOS Devices Alternative Source/Drain Contact-pad Architectures for Contact Resistance Improvement in Decanano-scaled DMOS Devices An Application-driven Improvement of the Drift-Diffusion Model for Carrier Transport in Decanano-scaled CMOS Devices Anforderungsgerechte Auslegung von Leistungselektronik im Antriebsstrang Anforderungsgerechte Auslegung von Leistungselektronik im Antriebsstrang Anforderungsgerechte Auslegung von Leistungselektronik im Antriebsstrang Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incident Angles Application driven Simulation of Nanoscaled CMOS Transistors and Circuits Barrier Inhomogeneities of Tungsten Schottky Diodes on 4H-SiC Benchmark of rigorous methods for electromagnetic field simulations Benchmark of rigorous methods for electromagnetic field simulations Bidirectional DC Voltage Conversion for Low Power Applications Characterization of Ru and RuO_2_ Thin Films Prepared by Pulsed Metal Organic Chemical Vapor Deposition Control and Optimization of Ru-deposition by Pulsed MOCVD Using Mass Spectroscopy Control and Optimization of Ru-deposition by Pulsed MOCVD Using Mass Spectroscopy Custom-specific UV Nanoimprint Templates and Life-time of Antisticking Layers Das Zentrum für KFZ-Leistungselektronik und Mechatronik - Neue Wege zum Hybrid-Antrieb DC-Arc Behavior of a Novel Active Fuse Detailed arsenic concentration profiles at Si/SiO_2_ interfaces Detailed arsenic concentration profiles at Si/SiO_2_ interfaces Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement Dispersing and stabilizing semiconducting nanoparticles (Posterpräsentation) Distribution and segregation of arsenic at the SiO_2_ /Si interface Electrical AFM Techniques for the Advanced Characterization of Materials in Semiconductor Technology Electrical and Topographical Characterization of Aluminium Implanted Layers in 4H Silicon Carbide Elektronische Bauelemente auf nanopartikulärer Basis Entwicklung und Charakterisierung eines CMOS-Prozesses mit minimierter Anzahl an Lithographieebenen Entwicklung von Verfahren zur Kontrolle von Plasmaätzprozessen mittels in situ-Ellipsometrie und optischer Emissionsspektroskopie Evaluation of lithographic processes in terms device performance data – a simulation study Evaluation of lithographic processes in terms device performance data – a simulation study (Poster) Experimental Investigations and Simulation of the Deactivation of Arsenic during Thermal Processes after Activation by SPER and Spike Annealing Experimental Observation of FIB Induced Lateral Damage on Silicon Samples Extraordinary low transmission effects for ultra-thin patterned metal films Fabrication and Characterization of Nanoparticulate ZnO-TFTs (Posterpräsentation) Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique HfSiO/SiO2- and SiO2/HfSiO/SiO2-Gate Stacks for non-volatile memories High yield aerosol synthesis of monodisperse, high-purity silicon nanoparti-cles High Yield Aerosol Synthesis of Monodisperse, High-purity Silicon Nanoparticles High-k: latest developments and perspectives Highly Filled Polymers for Power Passives Packaging Highly Filled Polymers for Power Passives Packaging Hightech-Materialien für die Elektronik von morgen Hightech-Materialien und Hybridantriebe - Forschung für die Elektronik von morgen Impact of Physical and Chemical Treatment on Si Nanoparticulate Systems (Posterpräsentation) Increasing the Predictability of AIMS Measurements by Coupling to Resist Simulations Increasing the predictability of AIMS measurements by coupling to resist simulations (Poster) Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) face Ink and Surface Modification for Printing of Nanoparticulate Functional Structures Ion Implantation Into Nanoparticulate Functional Layers Ion Implantation into Nanoparticulate Functional Layers Ion Implantation Into Nanoparticulate Functional Layers (Posterpräsentation) Leistungselektronik - Ein Schlüssel für Energieeffizienz und Mobilität Lithographic importance of base diffusion in chemically amplified photoresists Lithographic importance of base diffusion in chemically amplified photoresists Lithography simulation Lithography simulation: modeling techniques and selected applications Losses in Power Electronic Systems Low pressure gas phase synthesis of monodisperse, high-purity Si building blocks Mask topography effects: modeling techniques and impact on lithographic processes Materials and Processes for Printed Electronics Mesoscopic Simulation of Photoresist Processing in Optical Lithography Methode zur orts- und zeitaufgelösten Temperaturmessung und -steuerung bei großflächigen MOS-Leistungshalbleiterbauelementen Modeling and Simulation of Advanced Annealing Processes Modeling the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Moore's Law: Wie geht es mit Bauelementen und Materialien für die Nanoelektronik weiter On a Computationally Efficient Approach to Boron-Interstitial Clustering On the Stability of Fully Depleted SOI MOSFETs Under Lithography Process Variations Optical lithography for semiconductor fabrication: basics, resolution enhancement techniques, and selected problems Optimization of mask absorber stacks and illumination settings for contact hole imaging Optimization of mask absorber stacks and illumination settings for contact hole imaging Optische Lithographie in der Halbleiterherstellung: Grundlagen, Techniken zur Verbesserung der Auflösung und ausgewählte aktuelle Problemstellungen Performance Optimization of Semiconductor Manufacturing Equipment by the Application of Discrete Event Simulation Photomasks for semiconductor lithography: from simple shadow casters to complex 3D scattering sbjects Polymer bonded soft magnetic particles for planar inductive devices Pre-Silicon SPICE Modeling on Nano-Scaled SOI MOSFETs Pre-Silicon SPICE Modeling on Nano-Scaled SOI MOSFETs (Poster) Printing Electronics - Printed Electronics Projects at LEB and FhG IISB Process Models for Advanced Annealing Schemes and their Use in Device Simulation Process Models for Advanced Annealing Schemes and Their Use in Device Simulation Project Overview, Management, and Response to the Recommendations of the 1st Review Properties of TaN Thin Films Produced Using PVD Linear Dynamic Deposition Technique Rapid Thermal Processing and beyond: Applications in Semiconductor Processing Recent Improvements in the Integration of field Emitters into Scanning Probe Microscopy Sensors Rigorous diffraction simulations of topographic wafer stacks in double patterning Rigorous diffraction simulations of topographic wafer stacks in double patterning (Poster) Rigorous Electromagnetic Field Simulation of Two-Beam Interference Exposures for the Exploration of Double Patterning and Double Exposure Scenarios Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios (Poster) Ruthenium and Ruthenium Oxide Thin Films Prepared by Atomic Vapor Deposition for MIM Applications Schichten hoher Dielektrizitätskonstante für den Einsatz in ladungsbasierten nichtflüchtigen Speicherzellen Segregation of Antimony to Si/SiO_2_ Interfaces Segretation onf Antimony to Si/SiO_2_ Interfaces Selected topics in advanced lithography simulation Self-Aligned Growth of Organometallic Layers for Nonvolatile Memories: Comparison of Liquid-Phase and Vapor-Phase Deposition Simulation of mask proximity printing Simulation of Mass Interferences Considering Charge Exchange Events and Dissociation of Molecular Ions During Extraction Simulation of the Deactivation of Arsenic During Thermal Processes after Activation by SPER Simulation-based EUV source and mask optimization Simulation-based EUV source and mask optimization SSRM Characterisation of FIB Induced Damage in Silicon Summary Suppression of Parasitic Electron Injection in SONOS type Memory Cells Using High k Capping Layers Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers Threshold Voltage Engineering by Lanthanide Doping of the MOS Gate Stack Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics Untersuchung der UV-Nanoimprint-Lithografie als Strukturierungsverfahren für elektronische Bauelemente UV Nanoimprint Lithography Process Optimization for Electron Device Manufacturing on Nanosized Scale
	2007 A18 - a novel 0.18 mm Smart Power SOC IC Technology for Automotive Applications Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions Using Flash and Spike + Flash Annealing Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon, Characterization of the Pile-Up of As at the SiO2 / Si Interface Characterization of the Pile-Up of As at the SiO2/Si Interface Characterization of the Segregation of Arsenic at the Interface SiO2/Si Characterization of the Segregation of Arsenic at the Interface SiO2/Si Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors Custom-specific UV nanoimprint templates and life-time of antisticking layers Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches Entwicklung und Charakterisierung eines CMOS-Prozesses mit minimierter Anzahl an Lithographieebenen Experimental and theoretical results of dopant activation by a combination of spike and flash annealing Hafnium silicate as control oxide in non-volatile memories Hafnium silicate as control oxide in non-volatile memories High Temperature Implantation of Aluminum in 4H Silicon Carbide Impurity Conduction in Silicon Carbide Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobile Investigation of high-resolution contact printing Lateral HV-MOS Transistors (50 V) for Integration in a 0.18 mm CMOS-Process MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications Modeling the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Modeling the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Motorintegrierte Leistungselektronik: Strukturflexibel mechatronisch integrierbare passive elektronische Bauelemente Nanopartikuläre Halbleiterschichten: Leitungsmechanismen und Bauelemente On a Computationally Efficient Approach to Boron-Interstitial Clustering On a Computationally Efficient Approach to Boron-Interstitial Clustering Optimization of the Quartz Template Fabrication for UV Nanoimprint Lithography Photostrom-Spektroskopie von Silicium im Volumen und an der Grenzfläche zu Siliciumdioxid Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers Proximitiy printing - Simulation und Anwendung Quantitative oxide charge determination by photocurrent analysis Self-Aligned Growth of Organometallic Layers for Non-Volatile Memory Application Silicon Technology Simulation of mask proximity printing Simulation of proximity and contact lithography Synthesis of functional nanoparticles Tuning the dielectric properties of hafnium silicate Films TXRF as a sensitive analysis method for the investigation of sputtering processes Untersuchung von Ausheilverfahren für Aluminium-implantierte Schichten in 4H-Siliciumcarbid Upcoming Challenges for Process Modeling Upcoming Challenges for Process Modeling UV nanoimprint materials: Surface energies, residual layers, and imprint quality
	2006 Active Fuse Approach for a Standardized Methodology for Multi-site Processing of 300mm Wafers at R&D-Sites Automobilelektronik am LEB und IISB Bavarian Research Cooperation for Nanoeletronics Chemical Vapor Deposition of Tantalum Nitride Films for Metal Gate Application using TBTDET and Novel Single-Source MOCVD Precursors Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers Creation of E-Learning Content for Microelectronics Manufacturing Creation of E-Learning Content for Microelectronics Manufacturing Diffusion and Activation of Dopants in Silicon and Advanced Silicon-Based Materials Dreidimensionale Topographiesimulation der ionisierten Metallplasma-Abscheidung in der Halbleitertechnologie Dreidimensionale Topographiesimulation der ionisierten Metallplasma-Abscheidung in der Halbleitertechnologie Entwicklung und Charakterisierung eines CMOS-Prozesses mit minimierter Anzahl an Lithographieebenen European Approaches to Process Simulation in USJ Technology Extracting Activation and Compensation Ratio from Aluminium Implanted 4H-SiC by Modeling of Resistivity Measurements Flash annealing technology for USJ: Modeling and metrology Fraunhofer at the Nanoworld: Creating Synergies for Optimizing Applications and Enabling New Ones Fraunhofer Nanotechnology in Germany and Europe German High-Tech-Corridor in Nanoelectronics Technology Research Hafnium Silicate Layers as High-k Dielectrics for Future CMOS Generations HfSiO/SiO2- and SiO2/HfSiO/SiO2-Gate Stacks for non-volatile memories High Temperature Implantation of Aluminium in 4H Silicon Carbide History and Perspective of Integrated Metrology History and Perspective of Integrated Metrology Introduction to Technology Simulation Ion Implantation and Annealing for an Efficient N-Doping of TiO2 Nanotubes Kontaminationsprozesse in der Ionenimplantation Lösen neue Materialien die Probleme der Mikro- und Nanoelektronik Mask Proximity Printing Modeling and Simulation Modeling and Simulation Nanoscale morphology and photoemission of arsenic implanted germanium films Nanotechnology at Fraunhofer: Materials & Applications in Electronics Neue Methoden zur automatischen Kalibrierung von Modellparametern für die Simulation optischer Lithographie Neue Methoden zur automatischen Kalibrierung von Modellparametern für die Simulation optischer Lithographieprozesse Numerical Simulation of Advanced CMOS Devices Numerische Simulation der Diffusion und Aktivierung von Bor bei Hot-Shield Spike Ausheilung Optimization Methods in Lithography Simulation Optimization of Lithographic Conditions by Means of Artificial Evolution Pattern effects with the mask off Process-Induced Diffusion Phenomena in Advanced CMOS Technologies Process-Induced Diffusion Phenomena in Advanced CMOS Technologies Quantitative Oxide Charge Determination by Photocurrent Analysis Quantum Mechanical Studies of Boron Clustering in Silicon Segregation von Arsen an Silicium-Siliciumdioxidgrenzschichten Semiconductor Technology Simulation Down to the Nanolevel Semiconductor Technology Simulation: Industrial Requirements, Technology Roadmaps and the R&D Simulation of Activation and Diffusion of Boron in Silicon Simulation of Ion Beam Direct Structuring for 3D Nanoimprint Template Fabrication Stress Induced Leakage Currents and Charge Trapping in Thin Zr- and Hf-Silicate Layers The Impact of Mass Resolution on Molybdenum Contamination for B, P, BF2 and As Implantations Trends in European R&D - Advanced Process Control Down to Atomic Scale for Micro- and Nanotechnologies Untersuchung von Aufladungseffekten bei der Ionenimplantation Untersuchung von Aufladungseffekten bei der Ionenimplantation Well Design in a Bulk CMOS Technology with Low Mask Count
	2005 Ab Initio Identification of the Nitrogen Diffusion Mechanism in Silicon Additional Peaks in Mass Spectra Due to Charge Exchange Events and Dissociation of Molecular Ions During Extraction Advanced activation of ultra-shallow junctions using flash-assisted RTP Aluminium Nitride Thin Films for a Micromechanical Ultrasonic Liquid Nebulizer An Asymmetry of Conduction Mechanisms and Charge Trapping in Thin High-k HfxTiySizO Films Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Characterisation of the Impurity Profile at the Interface SiO_2_/ Si Using a Combination of Total Reflection X-Ray Fluorescence Spectrometry and Successive Etching of Silicon Characterization of Interface State Densities by Photocurrent Analysis: Comparison of Results for Different Insulator Layers Characterization of Interface State Denisties by Photocurrent Analysis: Comparison of Results for Different Insulator Layers Charakterisierung von Titandioxidschichten abgeschieden aus neuentwickelten Precursoren mittels MOCVD Charakterisierung von Titandioxidschichten abgeschieden aus neuentwickelten Precursoren mittels MOCVD Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren Conduction Mechanisms and an Evidence for Phonon-assisted Conduction Process in Thin high-k HfxTiySizO films Der Fraunhofer-Verbund Mikroelektronik und die Forschungs- und Entwicklungsschwerpunkte Design & Simulation in der Nanoelektronik Die SOA von integrierten Hochvolt MOS-Transistoren bestimmende bauelementphysikalische Effektte Diffusion and Activation of Dopants in Silicon and Advanced Silicon-Based Materials Diffusion und Aktivierung von Bor in Silicium Distribution, Segregation and Dose-Loss of Dopants in Deca Nanometer SOI Structures Effekte bei der Nanostrukturierung mittels fokussierter Ionenstrahlen Electrical properties of hafnium silicate films obtained form a single-source MOCVD precursor Entwicklung, Herstellung und Charakterisierung von integrierbaren Leistungsbauelementen und einer Trench-Gate Technologie Fraunhofer Nanotechnology Beyond Electronics: Making small things effective Front-End Models for Silicon Future Technology (FRENDTECH) Herstellung und Untersuchung von Metall-Isolator-Halbleiter (MIS)-Kondensatoren mit hoch-epsilon Isolatorschichten auf Germanium High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor Implantation and Annealing of Aluminium in 4H Silicon Carbide Improved Mask and Source Representations for Automatic Optimization of Lithographic Process Conditions Using a Genetic Algorithm Improved Mask and Source Representations for Automatic Optimization of Lithographic Process Conditions Using a Genetic Algorithm Intelligente Batterien durch integrierte Spannungswandler Investigations into the Wear of a WL10 Ion Source Ion Sputtering at Grazing Incidence for SIMS-Analysis Mikroelektronik - Schlüsseltechnologie unserer Zeit MOCVD of Conductive Cubic HfN Thin Films From Hf(NR2)4 and N,N-Dimethylhydrazine Modeling of Industrial Bulk Crystal Growth - State of the Art and Challenges Modellierung der Transienten Diffusion und Aktivierung von Bor während der Ausheilung nach einer Ionenimplantation Nanoelectronics at the Fraunhofer IISB and the University in Erlangen Nanotechnology in the Fraunhofer Microelectronics Alliance (VµE) Neuartige aktive Sicherungsbauelemente auf Silicium-Basis Numerische Simulation neuartiger Bauelemente für den 45nm CMOS Technologieknoten und darüber hinaus Optimierung der Stickstoffkonzentration in Gatedielelektrika und -elektroden für fortschrittliche CMOS-Technologien Point Defect Engineering for Ultra Shallow Junction Formation Scatterometric Measurements on Sub-wavelength Gratings Evaluated by a New Effective-medium Model SEA-NET - Semiconductor Equipment Assessment (SEA) Migrates to Nano Electronic Technology (NET) SEMI Integrated Measurement Task Force Europa - Layer Thickness Group: Status Report SEMI-Integrated Measurement Task Force Report and SEMI E141 Document Approval Smart-Power Technologien Smart-Power: Leistungselektronik im Mikrochip Stempel für Mikrochips Strukturbreitenbestimmung für die sub 100 nm-Lithographie mittels spektralellipsometrischer Beugungsmessung Thin HfxTiySizO Films with Varying Hf to Ti Contents as Candidates for High-k Dielecrics Triple Trench Gate IGBTs Triple Trench Gate IGBTs Überlegungen zur Realisierung von Hochvolt MOS-Transistoren im Rahmen eines 0.18µm Standard CMOS-Prozesses Unit Process Aspects for APC-software Implementation Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis Wafer Scale Characterization of Interface State Densities Without Test Structures by Photocurrent Analysis
	2004 3D Simulation of Process Effects Limiting FinFET Performance and Scalability 3D Simulation of Process Effects Limiting FinFET Performance and Scalability 3D-Feature-Scale Simulation of Sputter Etching with Coupling of Equipment Simulation 3D-Feature-Scale Simulation of Sputter Etching with Coupling to Equipment Simulation 3D-Simulation of Ionized Metal Plasma Vapor Depostition 1985 - 2004 Technologie für die Mikroelektronik A Physically-Based Model for the Spatial and Temporal Evolution of Self Interstitial Agglomerates in Ion-Implanted Silicon Adaptive Surface Triangulations for 3D Process Simulation Adaptive Surface Triangulations for 3D Process Simulation Additional Peaks in Mass Spectra Due to Charge Exchange Events and Dissociation of Molecular Ions During Extraction Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Ausheilungsuntersuchungen an Aluminium implantierten 4H-SiC Schichten Boron Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments Boron-Interstitial Cluster Cinetics: Extraction of Binding Energies from Dedicated Experiments Computation of Convection and Alloy Solidification With The Software Package CrysVUn Current Understanding and Modelling of B Diffusion and Activation Anomalies in Preamorphized Ultra-shallow Junctions Design, Fabrication, and Characterization of a Microactuator for Nebulazation of Fluids Different Current Conduction Mechanisms Through thin High-K HfxTiySizO Film Due to the Varying Hf to Ti Ratio E-Learning for Microelectronics Manufacturing Effect of Oxygen on the Diffusion of Nitrogen Implanted in Silicon Effective-Medium Model for Fast Evaluation of Scatterometric Measurements on Gratings Electrical Characterization and Reliability Aspects of Zirconium Silicate Films Obtained from Novel MOCVD Precursors Electrical Deactivation and Diffusion of Boron in Preamorphized Ultrashallow Junctions: Interstitial Transport and F Co-implant Control Electrical Properties of Hafnium Silicate Films Obtained from a Single-Source MOCVD Precursor Ellipsometrie zur Prozessüberwachung in der Halbleiterfertigung Evaluierung der Anforderung an zukünftige Siliciumscheiben für die Mikro- und Nanotechnologie Forschungs- und Entwicklungsschwerpunkte des IISB im Bereich der "Advanced Process Control" und der Integrierten Sensorik Front-End Models for Silicon Future Technology (IST-FRENDTECH) Future Requirements of Semiconductor Manufacturing Equipment from the Perspective of the Equipment Industry Genetic Algorithm for Optimization and Calibration in Process Simulation Genetic Algorithm for Optimization and Calibration in Process Simulation Hafniumsilikatschichten als Gatedielektrika Herstellung, Untersuchung und Modellierung von Schottky-Dioden mit ionenimplantierter Randfeldbegrenzung auf Siliciumcarbid High Temperature Processing for SiC Devices High-Voltage Extension (VBR < 800V) for Smart-Power SOI-Technologies Hochvoltbauelemente für Treiber-IC: Simulationen Integration of Field Emitters into Scanning Probe Microscopy Sensors Using Focused Ion and Electron Beams Intrinsic Point Defects, Impurities, and their Diffusion in Silicon Introduction to the Workshop on Airborne Molecular and Organic Contamination in Semiconductor Manufacturing Investigation of Rapid Thermal Annealed pn-Junctions in SiC Investigations into the Wear of a WL10 Ion Source Ion Sputtering at Grazing Incidence for SIMS-Analysis Ion Sputtering at Grazing Incidence for SIMS-Analysis ITRS 2003 - Roadblocks und Herausforderungen für die Forschung Materials Research Society Symposium Proceedings Materials Science Engineering B 114-115 Materialtransport als Zuverlässigkeitsproblem in Metallisierungssystemen Measurement Data Evaluation for in Situ Single-wavelength Ellipsometry During Reactive Ion Etching Mikroelektronik - Schlüsseltechnologie unserer Zeit Modeling and Simulation Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation Modelling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation Modelling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation Modelling of the Influence of Schottky Barrier Inhomogenities on SiC Diode Characteristics Nanofabrication Using Focused Ion and Electron Beams and its Application to Scanning Probe Microscopy Sensors Nanoimprint Nanoimprint Lithographie Neue Gerätetechniken und Produktionsänderungen im Frontend On the Modelling of Transient Diffusion and Activation of Boron During Post-Impantation Annealing On the Modelling of Transient Diffusion and Activation of Boron During Post-Implantation Annealing Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films Physical and Electrical Properties of Thin High-k HfxTiySi2O Film with varying Hf to Ti Ratios Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios Polierverfahren in der Halbleiterfertigung Predictive Simulation of the Formation of Ultra-Shallow Junctions by Non-Amorphizing Boron Implants Preface to the Special Issue on the EMRS 2004 B Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering" Presentation of UPPER+ Specifications Programm Overview Programm Overview Report on the Progress and Changes in Key Challenges of the ITWG "Yield Enhancement" Report on the Progress of the ITWG "Yield Enhancement" Statisches und dynamisches Verhalten des universellen bipolaren Schalters (UBS) Status UBS, erste experimentelle Ergebnisse Summary Summary Three-Dimensional Simulation of Ionized Metal Plazma Vapor Deposition Topography Process Simulation VDE-GMM-Introduction Vorstellung des neuen Bayerischen Forschungsverbundes für Nanoelektronik (FORNEL) XML-based Web Services for Integrated Metrology
	2003 3D Prozess-Simulation und ihre Anwendung in der Mikro- und Nanoelektronik 3D Prozess-Simulation und ihre Anwendung in der Mikro- und Nanoelektronik Characterization of charging damage in plasma doping Corner Effect in Double and Triple Gate FinFETs Corner Effect in Double and Triple Gate FinFETs Defect Inspection Method for Quality Control in a Reclaim Line Devices Physical and Electrical Optimization Die Entwicklung der Mikroelektronik bis 2015 nach der ITRS (International Technology Roadmap for Semiconductors) Die Rolle der Technologie: Leading Edge Silicon Different Ion Implanted Edge Terminations for Schottky Diodes on SiC Diffusion and electrical activation of indium in silicon Electrical Characterization and Reliability Aspects of Zirconium Silicate Films Obtained from Novel MOCVD Precursors Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors Elektrische Charakterisierung von Zirkonsilikatschichten abgeschieden mittels neuartiger metall-organischer Ausgangsstoffe ENCOTION A New Simulation Tool for Energetic Contamination Analysis Entwurfsaspekte zum lateralen Bipolarschalter mit steuerbaren Emitterstrukturen Figures of Merit for CMOS Switching Speed Hafnium Titanium Silicate High-k Dielectric Films Deposited by MOCVD using Novel Single Source Precursors High-Voltage Devices (>600 V) Produced with a Low-Voltage (<150 V) Smart-Power IC-Technology High-Voltage Devices (>600 V) Produced with a Low-Voltage (<150 V) Smart-Power IC-Technology Implantation und Ausheilung von SiC Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors Indium in silicon: A study on diffusion and electrical activation Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation Investigation of Implantation-Induced Defects in Thin Gate Oxides Using Low Field Tunnel Currents Investigation of Lanthanum Contamination from a Lanthanated Tungsten Ion Source Investigation of Rapid Thermal Annealed p-n Junctions in SiC Investigation of Rapid Thermal Annealed p-n Junctions in SiC Ion Implantation and Shallow Junction Formation Ionenimplantation in Halbleiter - 30 Jahre und kein Ende Live-Vorführung einer Schaltungsmodifikation“, Materialbearbeitung mittels fokussierter Ionenstrahlen zur TEM-Probenpräparation und Nanostrukturierung Materials Processing by Focused Ion Beams for TEM Sample Preparation and Nanostructuring Modeling and Simulation Modeling and Simulation Modellierung und Simulation der Diffusion von Aluminium in Silicium Modelling of the Influence of the Schottky Barrier Inhomogeneities on SiC Diode Characteristics Modelling of the Influence of the Schottky Barrier Inhomogeneities on SiC Diode Characteristics Nanoscale Effects in Focused Ion Beam Processing Non-destructive characterization of strontium bismuth tantalate films On the Role of Corner Effect in FinFETs On The Role Of Corner Effects in FinFETs Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films Quantum Mechanical Studies of Boron Clustering in Silicon Status UBS, erste experimentelle Ergebnisse Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC Technologie-Simulation Technologiesimulation - von Mathematik und Physik hin zur Anwendung Technology Simulation for the Nanoelectronics Era Three Dimensional Simulation of Superconformal Copper Deposition Based on the Curvature Enhanced Accelerator Coverage Mechanism Through the Gate - Implantationen / Anwendung und Auswirkungen auf die Gateoxid-Zuverlässigkeit Transient-diffusion effects Trench Sidewall Doping for Lateral Power Devices Untersuchung von Aufladungseffekten Wafer Reclaim in Semiconductor Manufacturing Zirconium silicate films obtained from novel MOCVD precursors
	2002 45 Jahre Leistungshalbleiter: Wie ein Bauelement unsere Alltags-Umwelt verändert hat A Novel Analytical Model of a SiC MOSFET AlGaN/GaN-Based MOSHFETs with Different Gate Dielectrics and Treatments Algorithmen für die dreiecksbasierte dreidimensionale Simulation bewegter Oberflächen in der Halbleitertechnologie Aluminiumdiffusion Auf dem Weg zur Siliciumcarbid-Elektronik Cell Adhesion on Modified Polyethylene Characterisation of BaxSr1 xTiO3 Films Using Spectroscopic Ellipsometry, Rutherfo¬rd Backscattering Spectrometry and X Ray Diffraction Characterization of AlxGa1-xN/AlyGa1-yN Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy Current status of models for transient phenomena in dopant diffusion and activation Current understanding and modeling of boron-interstitial clusters Determination of Aluminum Diffusion Parameters in Silicon Development of Enhanced Depth-resolution Technique for Shallow Dopant Profiles Effect of Barium Contamination on Gate Oxide Integrity in High-k DRAM Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors Entwicklung eines integrierbaren optischen Meßsystems zur Kontrolle der Linienbreiten periodischer sub-Mikrometerstrukturen Entwicklung eines Modells zur Diffusion von Aluminium in Silicium Entwurf und Herstellung von integrierten ionensensitiven Feldeffekttransistoren in CMOS-Technologie First AlGaN/GaN MOSFET with Photoanodic Gate Dielectric Grundlagen zu einem lateralen Bipolarschalter mit beidseitiger Emittersteuerung HandMon ISPM: Handling Monitoring in a Loading Station of a Furnace Herstellung und Abscheidung neuartiger metallorganischer Precursoren für Gatedielektrika Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation Influence of Photoresist Pattern on Charging Damage During High Current Ion Implantation Influence of Photoresist Pattern on Charging Damage During High Current Ion Implantation Influence of Surface Treatments on DC-Performance of GaN-Based HFETs in: Integrierbare laterale Hochvoltdiode (VBR>1000V) in Substrat-Substitutionstechnologie Investigation of Implantation-Induced Defects in Thin Gate Oxides Using Low Field Tunnel Currents Leistungshalbleiter mit dotierungskomensierter Driftzone, eine neue Klasse von Leistungshalbleitern MOCVD of titanium dioxid on the basis of new precursors Modeling and Simulation Modeling and Simulation Modellierung von transienten Effekten bei der Diffusion von Bor in Silicium Monolithisch integrierte Smart-Power ICs für leistungselektronische Systeme New Single-Source Precursors for the MOCVD of Higk-k Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices Phase Noise Amplitude Distribution as Indicator of Origin of Random Phase Perturbation in a Test Oscillator Phi Scatterometry for Integrated Linewidth and Process Control in DRAM Manufacturing Plasma induced damage monitoring for HDP processes Platinum Contamination Issues in Ferroelectric Memories Properties of vacancies in silicon determined from laser-annealing experiments Prozesssimulation - Beispiele aus der Siliciumtechnologie Recombination Lifetimes of Iron-contaminated Silicon Wafers: Characterization through a Single Set of Capture Cross sections Rückseitenkontaktierte Kohlenstoff-Interdigitalelektroden für bioelektronische Anwendungen Simulation of the Influence of Via Sidewall Tapering on Step Coverage of Sputter deposited Barrier Layers Simulationsstudien zu den Kenndaten integrierbarer Hochvolttransistoren für 42 V-Bordnetz Anwendungen Technologiesimulation - von Mathematik und Physik hin zur Anwendung Three-dimensional Simulation of the Channel Stop Implant Effects in Sub-quarter Micron PMOS Transistors Untersuchung von Aufladungseffekten während der Ionenimplantation anhand von MOS-Kondensatoren Verkohltes Silicium - Neues Halbleitermaterial für die Leistungselektronik Zirconium Silicate Films Obtained from Novel MOCVD Precursors
	2001 A reduced approach for modeling the influence of nanoclusters and {113} defects on transient enhanced diffusion Amino acids grafting of Ar+ ions modified PE Barium, Strontium and Bismuth Contamination in CMOS Processes Chemische Dampfphasenabscheidung von Materialien mit hoher Dielektrizitätskonstanten am Beispiel Barium-Strontium-Titanat Electrical reliability aspects of through the gate implanted MOS structures with thin oxides Experimental and Numerical Study of the CVD of TiO2 using New Titanium Precursors Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining High-resolution Constant-height Imaging with Apertured Silicon Cantilever Probes Impact of Platinum Contamination on Ferroelectric Memories In-line Failure Analysis on Pruductive Wafers with Dual Beam SEM/FIB Integrated metrology: An enabler for advanced process control (APC) Laterale Hochvolt-Bauelemente in SOI-Technologie: neue Gesichtspunkte zu einem alten Bauelementtyp Limitations of focused ion beam nanomachining MOCVD of Titanium Dioxide on the Basis of New Precursors New Materials in Future Memories: High Temperature Behaviour of Sr, Bi and Ir on Silicon Surfaces Monitored by TXRF and ELYMAT Proceedings of the 12th International Conference on Ion Implantation Technology Proceedings of the 31th European Solid-State Device Research Conference Recombination lifetimes of iron contaminated silicon wafers: Characterization through a single set of capture cross-sections Reliability of ultra-thin N20-nitrided oxides grown by RTP under low pressure in different gas atmospheres Smart-Power IC-Technologien für >ca. 200 V Spannungsfestigkeit Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination Tungsten, Nickel, and Molybdenum Schottky Diodes with Different Edge Termination Untersuchung von Punktdefekten in Silicium mit Hilfe der Platindiffusion
	2000 A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Adhesion and proliferation of keratinocytes on ion beam modified polyethylene Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories Contamination Control for Ion Implantation Contamination Control for Ion Implantation Defects and Gallium-Contamination During Focused Ion Beam Micro Machining Development of an Ultraviolet Photodetector and a Compact Ozone Absorption Photometer Diffusion (IMEC Short Course) Diskretisierung und Gittergeneration für die mehrdimensionale Simulation von Implantation und Diffusion Dotierung von 4H-SiC durch Ionenimplantation Dreidimensionale analytische Simulation der Ionenimplantation Electrical Reliability Aspects of Through the Gate Implanted MOS-Structures with Thin Oxides Enhanced Depth-Resolution Analysis with Medium Energy Ion scattering (MEIS) for Shallow Junction Profiling Field emitter array fabricated using focused ion and electron beam induced reaction Gate Oxide Damage Due to Through the Gate Implantation in MOS-Structures with Ultrathin and Standard Oxides HECTOR 300 - deposition of high-k material Investigation of Molybdenum Contamination in 11B+ and 31P+ Implants Ion Implantation Modeling the amorphization of Si due to the implantation of As, Ge, and Si Modeling the pH response of silicon nitride ISFET devices Modellierung der Diffusion von Aluminium in Silicium Modelling of Intrinsic Aluminum Diffusion for Future Power Devices Monte Carlo Simulation and Modeling of Ion Implantation Induced Contamination Profiles Phosphorus Ion Shower Implantation for Special Power IC Application Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide Safety Considerations for Ion Implanters Safety Considerations for Ion Implanters Smart-Power IC-Technologien: Verwirrende Vielfalt oder klare Systematik? Vacacny-Nitrogen Complexes in Floar-Zone Silicon Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development based on FIB / Dual Beam Inline Application
	1999 AFM and STM Investigation of Carbon Nanotubes Produced High Energy Ion Irradiation of Graphite An Analytical Model for Beam Induced Contamination in Ion Implantation Carbon Nanotubes Produced by High Energy (E>100MeV) , Heavy Ion Irradiation of Graphite Comparisation of Beam-Induced Deposition Using Ion Microprobe Extraction of vacancy parameters from outdiffusion of zinc from silicon Forming Nitrided Gate Oxides by Nitrogen Implantation into Substrate before Gate Oxidation by RTO Impurity Incorporation during Beam Assisted Processing Analyzed Using Nuclear Microprobe Investigation of Cu Films by Focused Ion Beam Induced Deposition Using Nuclear Microprobe MOCVD of Ferroelectric Thin Films Modeling of Transient Enhanced Dopant Diffusion by Using a Moment-Based Model Describing Point-Defect Clustering Nano-slit probes for near-field optical microscopy fabrcated by focused ion beams On the influence of boron-interstitial complexes on transient enhanced diffusion Scanning Probe Method Investigation of Carbon Nanotubes Produced by High Enery Ion Irradiation of Graphite Simulation of a Coating Protection for an In Situ Ellipsometer in a CVD Furnace The influence of surface oxidation on the pH-sensing properties of silicon nitride
	1992 Simulation of high energy implantation profiles in crystalline silicon



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