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  Halbleiter großer Bandlücke

Lecturer
Prof. Dr.-Ing. Peter Wellmann

Details
Vorlesung
1 cred.h, ECTS studies, ECTS credits: 1,5, Sprache Deutsch
Time and place: block seminar 27.5.2015-10.6.2015 Wed 8:30 - 11:00, 3.71

Fields of study
WPF MWT-MA-WET 2
WPF ET-MA-MWT 2

Contents
The lecture will give an introduction to the most common wide bandgap semicondutor materials. Physical properties, applications, growth & epitaxy as well as some specialties will be discussed. In terms of materials the most common wide bandgap semicondutors like silicon carbid (SiC9, nitrides GaN and related alloys), II-VI semicondutors (ZnSe and related as well as ZnO) and diamond (C) will be considered.

ECTS information:
Credits: 1,5

Additional information
Expected participants: 2

Verwendung in folgenden UnivIS-Modulen
Startsemester WS 2014/2015:
Crystal Growth ET (MWT 3) (CGET)
Crystal Growth MWT (M2 - M3) (CGMWT)
Crystal Growth NT (CG NT)
Materialien der Elektronik und Energietechnik mit Vertiefung Crystal Growth (M1_CG_WW6)

Department: Materials for Electronics and Energy Technology (i-MEET) (Prof. Dr. Brabec)
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