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Halbleiter großer Bandlücke (HLgB)- Lecturer
- Prof. Dr.-Ing. Peter Wellmann
- Details
- Vorlesung
1 cred.h, ECTS studies, ECTS credits: 1,5, Sprache Deutsch
Time and place: Wed 14:15 - 15:45, 3.71; comments on time and place: 6 Termine n.V. / keine Vorlesung am 04.05.2016
Preliminary meeting: 13.4.2016, 8:30 - 9:00 Uhr, room 3.71
- Fields of study
- WPF MWT-MA-WET 2
WPF ET-MA-MWT 2
- Contents
- The lecture will give an introduction to the most common wide bandgap semicondutor materials. Physical properties, applications, growth & epitaxy as well as some specialties will be discussed. In terms of materials the most common wide bandgap semicondutors like silicon carbid (SiC9, nitrides GaN and related alloys), II-VI semicondutors (ZnSe and related as well as ZnO) and diamond (C) will be considered.
- ECTS information:
- Credits: 1,5
- Additional information
- Expected participants: 10
- Verwendung in folgenden UnivIS-Modulen
- Startsemester WS 2015/2016:
- Crystal Growth & Semiconductor Technology ET (MWT 3) (CGET)
- Crystal Growth & Semiconductor Technology MWT (M2 - M3) (CGMWT)
- Crystal Growth & Semiconductor Technology NT (CG NT)
- Materialien der Elektronik und Energietechnik mit Vertiefung Crystal Growth (M1_CG_WW6)
- Semiconductor technology (CE5)
- Department: Chair of Materials for Electronics and Energy Technology
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