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Rambach, Martin ; Frey, Lothar ; Bauer, Anton ; Ryssel, Heiner:
Extracting Activation and Compensation Ratio from Aluminium Implanted 4H-SiC by Modeling of Resistivity Measurements.
In: Silicon Carbide and Related Materials 2005.
Bd. 527-529. Stafa-Zurich, Switzerland : Trans Tech Publications, 2006, S. 827-830.
Stichwörter: activation, compensation, modeling, p-doping, resistivity
[doi>10.4028/www.scientific.net/MSF.527-529.827]
Institution: Lehrstuhl für Elektronische Bauelemente
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